Infineon 100V N-Channel MOSFET – ISC080N10NM6ATMA1

N-channel power MOSFET from Infineon's OptiMOS™ 6 series for high-frequency switching and synchronous rectification. Check electrical specifications, package, and connections against the original component before replacement. The current rating applies under the datasheet's temperature and cooling conditions, not free operation without cooling.

Specifications

• Manufacturer: Infineon
• Series: OptiMOS™ 6
• Part number (MPN): ISC080N10NM6ATMA1
• Type: N-channel power MOSFET
• Drain–source voltage (VDS): 100 V
• Continuous drain current: 75 A at TC = 25°C
• RDS(on): max 8.05 mΩ at VGS = 10 V, ID = 20 A
• Gate–source voltage: ±20 V
• Package: PG-TDSON-8 (SuperSO8)
• Operating temperature: −55 to +175°C

Illustrative product image.

Manufacturer's datasheet (Infineon)